两个女孩,同是华中科技大学的博士,一个计算机博士,一个工学博士。都是今年6月博士毕业,一个被企业录取,一个被大学录取。
为啥计算机博士的成就可以理解, 工学博士的成就不能理解? 如果这个计算机博士也被大学录取当导师了呢?
下面人家参与研究发表的论文。
2015-2020,华中科技大学,微电子学与固体电子学,工学博士 (导师:吴燕庆)
2011-2015,华中科技大学,电子科学与技术,工学学士
专注纳米材料生长、微纳电子器件的加工制备、新原理器件制备与测试以及电路设计与集成。在Nature Materials、Nature Nanotechnology、Advanced Electronic Materials等期刊发表SCI论文10余篇。
- 1. Li S. M., Tian M. C., Gao Q. G., Wang M. F., Hu Q. L., Li X. F., Wu Y. Q. Nanometer thin indium tin oxide for advanced high performance electronics. Nature Materials, 2019, 18(10), 1091-1097.
- 2. Li S. M., Tian M. C., Gu C. R., Wang R. S., Wang M. F., Xiong X., Li X. F., Huang R., Wu Y. Q. BEOL Compatible 15-nm channel length ultrathin indium-tin-oxide transistors with Ion = 970 μA/μm and on/off ratio near 1011 at Vds = 0.5 V. IEDM, 2019.
- 3. Huang M. Q., Li S. M., Zhang Z. F., Xiong X., Li X. F., Wu Y. Q. Multifunctional high-performance van der Waals heterostructures. Nature Nanotechnology, 2017, 12(12), 1148.
- 4. Wang M. F., Tian M. C., Zhang Z. F., Li S. M., Wang R. S., Gu C. R., Shan X. Y., Xiong X., Huang R., Hu Q. L., Li X. F., Wu Y. Q. High performance gigahertz flexible radio frequency transistors with extreme bending conditions. IEDM, 2019.
- 5. Li T. Y., Tian M. C., Li S. M., Huang M. Q., Xiong X., Hu Q. L., Li S. C., Li X. F., Wu Y. Q. Black phosphorus radio frequency electronics at cryogenic temperatures. Advanced Electronic Materials, 2018, 4, 1800138.
- 6. Li X. F., Wu J. Y, Ye Y. S., Li S. M., Li T. Y., Xiong X., Xu X. L., Gao T. T., Xie X. L., Wu Y. Q. Performance and reliability improvement under high current densities in black phosphorus transistors by interface engineering. ACS Applied Materials Interfaces, 2019, 11 (1), 1587–1594.
- 7. Li T. Y., Zhang Z. F., Li X. F., Huang M. Q., Li S. C., Li S. M., Wu Y. Q. High field transport of high performance black phosphorus transistors. Applied Physics Letters, 2017, 110, 163507.
- 8. Wang M. F., Li X. F., Xiong X., Song J., Gu C. R., Zhang D., Hu Q. L., Li S. M., Wu Y. Q. High-performance flexible ZnO thin-film transistors by atomic layer deposition. IEEE Electron Device Letters, 2019, 40, 3, 419-422.
- 9. Hu Q. H., Hu, B., Gu C. R., Li T. Y., Li S. C., Li S. M., Li X. F., Wu Y.Q. Improved current collapse in recessed AlGaN/GaN MOS-HEMTs by interface and structure engineering. IEEE Transactions on Electron Devices, 2019, 66(11): 4591-4596.